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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 5 — Mar. 1, 2012
  • pp: 896–898

AlxGa1xN–based deep-ultraviolet 320×256 focal plane array

Erdem Cicek, Zahra Vashaei, Edward Kwei-wei Huang, Ryan McClintock, and Manijeh Razeghi  »View Author Affiliations

Optics Letters, Vol. 37, Issue 5, pp. 896-898 (2012)

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We report the synthesis, fabrication, and testing of a 320×256 focal plane array (FPA) of back-illuminated, solar-blind, p-i-n, AlxGa1xN–based detectors, fully realized within our research laboratory. We implemented a pulse atomic layer deposition technique for the metalorganic chemical vapor deposition growth of thick, high-quality, crack-free, high Al composition AlxGa1xN layers. The FPA is hybridized to a matching ISC 9809 readout integrated circuit and operated in a SE-IR camera system. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower, and falling off three orders of magnitude by 285nm. By developing an opaque masking technology, the visible response of the ROIC is significantly reduced; thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allows the FPA to achieve high external quantum efficiency (EQE); at 254 nm, average pixels showed unbiased peak responsivity of 75mA/W, which corresponds to an EQE of 37%. Finally, the uniformity of the FPA and imaging properties are investigated.

© 2012 Optical Society of America

OCIS Codes
(040.1240) Detectors : Arrays
(040.5160) Detectors : Photodetectors
(040.7190) Detectors : Ultraviolet
(110.0110) Imaging systems : Imaging systems
(250.0040) Optoelectronics : Detectors

ToC Category:

Original Manuscript: August 9, 2011
Manuscript Accepted: January 19, 2012
Published: February 24, 2012

Erdem Cicek, Zahra Vashaei, Edward Kwei-wei Huang, Ryan McClintock, and Manijeh Razeghi, "AlxGa1−xN–based deep-ultraviolet 320×256 focal plane array," Opt. Lett. 37, 896-898 (2012)

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