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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 37, Iss. 8 — Apr. 15, 2012
  • pp: 1298–1300

Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers

Peng-Fei Xu, Hai-Ming Ji, Jin-Long Xiao, Yong-Xian Gu, Yong-Zhen Huang, and Tao Yang  »View Author Affiliations


Optics Letters, Vol. 37, Issue 8, pp. 1298-1300 (2012)
http://dx.doi.org/10.1364/OL.37.001298


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Abstract

The carrier induced refractive index change and linewidth enhancement factor α due to ground-state (GS) and excited-state (ES) transitions have been compared by measuring the optical gain spectra from an InAs/GaAs quantum dot (QD) laser structure. It is shown that the ES transition exhibits a reduced α-factor compared to the value due to the GS transition. This result can be explained by the α-factor due to the ES transition having a smaller increase from the non-resonant carriers in the combined state of the wetting layer and InGaAs strain reducing layer than the α-factor increase due to the GS transition, since the relaxation time for carriers from the combined state of the wetting layer and InGaAs strain reducing layer to the ES is shorter than to the GS. The result reported here shows another advantage of using ES QD lasers for optical communication, in addition to their higher modulation speed.

© 2012 Optical Society of America

OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Optoelectronics

History
Original Manuscript: December 23, 2011
Manuscript Accepted: February 2, 2012
Published: April 5, 2012

Citation
Peng-Fei Xu, Hai-Ming Ji, Jin-Long Xiao, Yong-Xian Gu, Yong-Zhen Huang, and Tao Yang, "Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers," Opt. Lett. 37, 1298-1300 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-8-1298


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