By using 0.25 μm high-voltage CMOS technology, we have designed and fabricated a structure of single-photon detectors. The new single-photon avalanche diode (SPAD) has (to our knowledge) the lowest dark count rate per unit area at room temperature without any technology customization. Our design is promising for realizing low-cost and high-performance SPAD arrays for imaging applications.
© 2012 Optical Society of America
Original Manuscript: September 26, 2012
Revised Manuscript: November 12, 2012
Manuscript Accepted: November 23, 2012
Published: December 20, 2012
Fang-Ze Hsu, Jau-Yang Wu, and Sheng-Di Lin, "Low-noise single-photon avalanche diodes in 0.25 μm high-voltage CMOS technology," Opt. Lett. 38, 55-57 (2013)