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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 38, Iss. 14 — Jul. 15, 2013
  • pp: 2425–2427

Experimental demonstration and observation of a plasmon wave occuring at a GaAs–Au–GaN interface

A. Stolz, M. Tchernycheva, P. Tilmant, E. Dogheche, D. Pavlidis, and D. Decoster  »View Author Affiliations


Optics Letters, Vol. 38, Issue 14, pp. 2425-2427 (2013)
http://dx.doi.org/10.1364/OL.38.002425


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Abstract

Integration of surface plasmon structures using semiconductor materials is limited due to the difficulties encountered in maintaining the resonance conditions upon packaging. We propose here a technology process allowing us to bond two semiconductors, such as gallium nitride (GaN) and gallium arsenide (GaAs), through a thin metal layer. This solution allows the excitation of a surface plasmon wave in an integrated classical Kretschmann configuration. The Letter presents various metal bonding conditions employed for Au deposited on both GaN/sapphire and GaAs substrates aiming at semiconductor–metal–semiconductor interfaces transparent at telecom wavelengths. The process conditions for the bondings are optimized using Ti/Au ( 3 nm / 30 nm ) layers on each of the wafers to be bonded under an applied pressure of 500 mbar at a low temperature of 250°C.

© 2013 Optical Society of America

OCIS Codes
(160.3130) Materials : Integrated optics materials
(240.6680) Optics at surfaces : Surface plasmons
(310.6845) Thin films : Thin film devices and applications

ToC Category:
Optics at Surfaces

History
Original Manuscript: April 19, 2013
Manuscript Accepted: May 29, 2013
Published: July 5, 2013

Citation
A. Stolz, M. Tchernycheva, P. Tilmant, E. Dogheche, D. Pavlidis, and D. Decoster, "Experimental demonstration and observation of a plasmon wave occuring at a GaAs–Au–GaN interface," Opt. Lett. 38, 2425-2427 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-14-2425

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