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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 23 — Dec. 1, 2013
  • pp: 5055–5058

ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes

Jae Hoon Lee, Kie Young Woo, Kyeong Heon Kim, Hee-Dong Kim, and Tae Geun Kim  »View Author Affiliations

Optics Letters, Vol. 38, Issue 23, pp. 5055-5058 (2013)

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ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.

© 2013 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(310.6860) Thin films : Thin films, optical properties
(310.4165) Thin films : Multilayer design
(310.7005) Thin films : Transparent conductive coatings

ToC Category:
Thin Films

Original Manuscript: September 3, 2013
Revised Manuscript: October 17, 2013
Manuscript Accepted: October 24, 2013
Published: November 22, 2013

Jae Hoon Lee, Kie Young Woo, Kyeong Heon Kim, Hee-Dong Kim, and Tae Geun Kim, "ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes," Opt. Lett. 38, 5055-5058 (2013)

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