We use numerical simulations to show that a suitably dimensioned periodic arrangement of vertical metallic metal–dielectric–metal nanocavities supports a hybrid plasmonic mode whose spatial electric field distribution is suitable for use in infrared photodetectors based on an unpatterned semiconductor thin-film absorbing layer. The partially localized nature of the hybrid mode offers reduced sensitivity to the angle of incoming light and smaller pixel sizes compared with surface plasmonic modes coupled by diffraction.
© 2013 Optical Society of America
Original Manuscript: October 22, 2012
Revised Manuscript: December 18, 2012
Manuscript Accepted: December 18, 2012
Published: January 16, 2013
Daivid Fowler, Salim Boutami, Matthieu Duperron, Gregory Moille, Giacomo Badano, François Boulard, Johan Rothman, Olivier Gravrand, and Roch Espiau de Lamaestre, "Partially localized hybrid surface plasmon mode for thin-film semiconductor infrared photodetection," Opt. Lett. 38, 254-256 (2013)