In this Letter we demonstrate heralded single-photon generation in a III–V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of 3.4×107 pairs·s−1 nm−1 W−1 facilitated through dispersion engineering and the suppression of two-photon absorption in the gallium indium phosphide material. Photon pairs are generated with a coincidence-to-accidental ratio over 60 and a low g(2)(0) of 0.06 proving nonclassical operation in the single photon regime.
© 2013 Optical Society of America
Original Manuscript: December 11, 2012
Revised Manuscript: January 19, 2013
Manuscript Accepted: January 21, 2013
Published: February 22, 2013
Alex S. Clark, Chad Husko, Matthew J. Collins, Gaelle Lehoucq, Stéphane Xavier, Alfredo De Rossi, Sylvain Combrié, Chunle Xiong, and Benjamin J. Eggleton, "Heralded single-photon source in a III–V photonic crystal," Opt. Lett. 38, 649-651 (2013)