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Optics Letters

Optics Letters


  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 6 — Mar. 15, 2014
  • pp: 1501–1504

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

Guanjun You, Jie Liu, Zhenyu Jiang, Li Wang, N. A. El-Masry, A. M. Hosalli, Salah M. Bedair, and Jian Xu  »View Author Affiliations

Optics Letters, Vol. 39, Issue 6, pp. 1501-1504 (2014)

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The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.

© 2014 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(190.7220) Nonlinear optics : Upconversion
(230.3670) Optical devices : Light-emitting diodes
(300.6500) Spectroscopy : Spectroscopy, time-resolved

ToC Category:

Original Manuscript: October 14, 2013
Revised Manuscript: February 9, 2014
Manuscript Accepted: February 9, 2014
Published: March 11, 2014

Guanjun You, Jie Liu, Zhenyu Jiang, Li Wang, N. A. El-Masry, A. M. Hosalli, Salah M. Bedair, and Jian Xu, "Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires," Opt. Lett. 39, 1501-1504 (2014)

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