Ultralow-threshold microcavity Raman laser on a microelectronic chip
Optics Letters, Vol. 29, Issue 11, pp. 1224-1226 (2004)
http://dx.doi.org/10.1364/OL.29.001224
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Abstract
Using ultrahigh- Q toroid microcavities on a chip, we demonstrate a monolithic microcavity Raman laser. Cavity photon lifetimes in excess of 100 ns combined with mode volumes typically of less than 1000(µm) 3 significantly reduce the threshold for stimulated Raman scattering. In conjunction with the high ideality of a tapered optical fiber coupling junction, stimulated Raman lasing is observed at an ultralow threshold (as low as 74µW of fiber-launched power at 1550 nm) with high efficiency (up to 45% at the critical coupling point) in good agreement with theoretical modeling. Equally important, the wafer-scale nature of these devices should permit integration with other photonic, mechanical, or electrical functionality on a chip.
© 2004 Optical Society of America
OCIS Codes
(190.5650) Nonlinear optics : Raman effect
(220.4000) Optical design and fabrication : Microstructure fabrication
(230.5750) Optical devices : Resonators
Citation
T. J. Kippenberg, S. M. Spillane, D. K. Armani, and K. J. Vahala, "Ultralow-threshold microcavity Raman laser on a microelectronic chip," Opt. Lett. 29, 1224-1226 (2004)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-29-11-1224
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