Efficient GaAlAs diode-laser-pumped operation of Nd:YLF at 1.047 µm with intracavity doubling to 523.6 nm
Optics Letters, Vol. 11, Issue 4, pp. 204-206 (1986)
http://dx.doi.org/10.1364/OL.11.000204
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Abstract
Diode-laser-pumped Nd:YLF lasers are demonstrated at 1.047 µm with less than 1-mW thresholds and internal quantum efficiencies approaching 70%. Operation at 1.053 µm has also been achieved. Intracavity second harmonic generation using MgO:LiNbO3 has generated up to 145-µW output at 523.6 nm for 30.1 mW of diode-laser pump power.
© 1986 Optical Society of America
Citation
T. Y. Fan, G. J. Dixon, and Robert L. Byer, "Efficient GaAlAs diode-laser-pumped operation of Nd:YLF at 1.047 µm with intracavity doubling to 523.6 nm," Opt. Lett. 11, 204-206 (1986)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-11-4-204
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