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Optics Letters

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  • Vol. 12, Iss. 10 — Oct. 1, 1987
  • pp: 812–813

Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature

H. Z. Chen, A. Ghaffari, H. Wang, H. Morkoç, and A. Yariv  »View Author Affiliations


Optics Letters, Vol. 12, Issue 10, pp. 812-813 (1987)
http://dx.doi.org/10.1364/OL.12.000812


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Abstract

Room-temperature continuous-wave operation of large-area (120 μm × 980 μm) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/cm2 (1900-μm cavity length), maximum slope efficiencies of about 0.8 W/A (600-μm cavity length),and optical power in excess of 270 mW/facet (900-μm cavity length) have been observed under pulsed conditions.

© 1987 Optical Society of America

History
Original Manuscript: June 22, 1987
Manuscript Accepted: July 16, 1987
Published: October 1, 1987

Citation
H. Z. Chen, A. Ghaffari, H. Wang, H. Morkoç, and A. Yariv, "Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature," Opt. Lett. 12, 812-813 (1987)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-12-10-812


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References

  1. T. H. Windhorn, G. Metze, Appl. Phys. Lett. 47, 1031 (1985). [CrossRef]
  2. S. Sakai, T. Soga, M. Takeyasu, M. Umeno, Appl. Phys. Lett. 48, 413 (1986). [CrossRef]
  3. R. Fisher, W. Kopp, H. Morkoç, M. Pion, A. Specht, G. Burkhart, H. Appelman, D. McGougan, R. Rice, Appl. Phys. Lett. 48, 1360 (1986). [CrossRef]
  4. R. D. Dupuis, J. P. Van der Ziel, R. A. Logan, J. M. Brown, C. J. Pinzone, Appl. Phys. Lett. 50, 407 (1987). [CrossRef]
  5. H. Z. Chen, A. Ghaffari, H. Wang, H. Morkog, A. Yariv, presented at symposium, Future Opportunities through GaAs/Si, Marina del Rey, Calif., June 18–19, 1987.

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