We give experimental results for amplitude and phase modulation by free-carrier injection in planar and rib waveguides at a wavelength of 10.6 μm. These waveguides have been formed by metal-organic chemical-vapor deposition of InP and GaInAs layers on InP substrates. Absorptions of 95% associated with phase shifts greater than 3π have been measured for injection-current densities below 1 A/cm2 with a planar guiding structure and drive currents of approximately 10 mA for typical channel waveguides.
© 1987 Optical Society of America
Original Manuscript: April 22, 1987
Manuscript Accepted: August 19, 1987
Published: November 1, 1987
D. Delacourt, R. Blondeau, C. Brylinski, M. A. di Forte-Poisson, N. Herschkorn, C. Kazmierski, and M. Papuchon, "Amplitude and phase modulation by free-carrier injection in III–V semiconducting waveguides for the 10.6-μm wavelength," Opt. Lett. 12, 950-952 (1987)