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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Vol. 12, Iss. 11 — Nov. 1, 1987
  • pp: 950–952

Amplitude and phase modulation by free-carrier injection in III–V semiconducting waveguides for the 10.6-μm wavelength

D. Delacourt, R. Blondeau, C. Brylinski, M. A. di Forte-Poisson, N. Herschkorn, C. Kazmierski, and M. Papuchon  »View Author Affiliations


Optics Letters, Vol. 12, Issue 11, pp. 950-952 (1987)
http://dx.doi.org/10.1364/OL.12.000950


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Abstract

We give experimental results for amplitude and phase modulation by free-carrier injection in planar and rib waveguides at a wavelength of 10.6 μm. These waveguides have been formed by metal-organic chemical-vapor deposition of InP and GaInAs layers on InP substrates. Absorptions of 95% associated with phase shifts greater than 3π have been measured for injection-current densities below 1 A/cm2 with a planar guiding structure and drive currents of approximately 10 mA for typical channel waveguides.

© 1987 Optical Society of America

History
Original Manuscript: April 22, 1987
Manuscript Accepted: August 19, 1987
Published: November 1, 1987

Citation
D. Delacourt, R. Blondeau, C. Brylinski, M. A. di Forte-Poisson, N. Herschkorn, C. Kazmierski, and M. Papuchon, "Amplitude and phase modulation by free-carrier injection in III–V semiconducting waveguides for the 10.6-μm wavelength," Opt. Lett. 12, 950-952 (1987)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-12-11-950

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