A technique for accurate measurement of the linear electro-optic coefficient(s) in crystals that are simultaneously optically active and birefringent is described. It is shown that this technique provides a direct method of measuring field-induced birefringence and so can form the basis of a Bi12SiO20 (or Bi12GeO20) sensor arrangement. The high degree of accuracy obtained in the measurements of the linear electro-optic coefficient in Bi12SiO20 and Bi12GeO20 crystals indicates the particular suitability of these materials in electric-field and voltage-sensor systems with a high dynamic range and for possible waveguiding applications.
© 1988 Optical Society of America
Original Manuscript: June 16, 1987
Manuscript Accepted: October 18, 1987
Published: January 1, 1988
P. Bayvel, M. McCall, and R. V. Wright, "Continuous method for measuring the electro-optic coefficient in Bi12SiO20 and Bi12GeO20," Opt. Lett. 13, 27-29 (1988)