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Optics Letters

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  • Vol. 13, Iss. 10 — Oct. 1, 1988
  • pp: 826–828

Interference-filter-tuned, alignment-stabilized, semiconductor external-cavity laser

P. Zorabedian and W. R. Trutna, Jr  »View Author Affiliations


Optics Letters, Vol. 13, Issue 10, pp. 826-828 (1988)
http://dx.doi.org/10.1364/OL.13.000826


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Abstract

We compared the angular alignment tolerance and the tuning range of a novel interference-filter-tuned semiconductor external-cavity laser based on a degenerate resonator with characteristics similar to those of a conventional grating-tuned external-cavity laser using a 1300-nm InGaAsP Fabry–Perot laser with an antireflection-coated facet as the gain medium. The interference-filter cavity had a 260-fold greater alignment tolerance (±26 versus ±0.1 mrad) and nearly the same tuning range (90 versus 110 nm) as the grating-tuned cavity.

© 1988 Optical Society of America

History
Original Manuscript: May 12, 1988
Manuscript Accepted: July 7, 1988
Published: October 1, 1988

Citation
P. Zorabedian and W. R. Trutna, "Interference-filter-tuned, alignment-stabilized, semiconductor external-cavity laser," Opt. Lett. 13, 826-828 (1988)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-13-10-826


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References

  1. R. Wyatt, W. J. Devlin, Electron. Lett. 19, 110 (1983). [CrossRef]
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  5. G. P. Agrawal, N. K. Dutta, Long- Wavelength Semiconductor Lasers (Van Nostrand Reinhold, New York, 1986), Chap. 2. [CrossRef]
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