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Optics Letters

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  • Vol. 13, Iss. 2 — Feb. 1, 1988
  • pp: 105–107

Interpretation of relaxation oscillations of semiconductor lasers in terms of the dynamic Stark effect

B. Thedrez and R. Frey  »View Author Affiliations


Optics Letters, Vol. 13, Issue 2, pp. 105-107 (1988)
http://dx.doi.org/10.1364/OL.13.000105


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Abstract

Experiments using intracavity nearly degenerate four-wave mixing in GaAlAs semiconductor laser oscillators and resonant-type amplifiers suggest that the resonance-relaxation process can be simply interpreted in terms of the dynamic Stark effect for a two-level system. This new interpretation is confirmed by a theoretical development demonstrating that lasers and resonant-type amplifiers can actually be represented well by an equivalent two-level system that takes into account both the semiconductor medium and cavity constants. Such an analysis can be useful for the study of higher-order instabilities.

© 1988 Optical Society of America

History
Original Manuscript: April 16, 1987
Manuscript Accepted: November 2, 1987
Published: February 1, 1988

Citation
B. Thedrez and R. Frey, "Interpretation of relaxation oscillations of semiconductor lasers in terms of the dynamic Stark effect," Opt. Lett. 13, 105-107 (1988)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-13-2-105


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