We analyze the waveguiding properties of the oxygen-implanted, buried-oxide, silicon-on-insulator structures currently being developed for use in microelectronics. We find that in spite of the fact that the buried-oxide layer is only a few tenths of a micrometer thick, the single-crystal overlayer can support TE0 guided-wave propagation, at subbandgap wavelengths, with losses due to substrate radiation leakage at or below the benchmark level of 1 dB/cm.
© 1988 Optical Society of America
B. N. Kurdi and D. G. Hall, "Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures," Opt. Lett. 13, 175-177 (1988)