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Optics Letters

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  • Vol. 13, Iss. 2 — Feb. 1, 1988
  • pp: 175–177

Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures

B. N. Kurdi and D. G. Hall  »View Author Affiliations


Optics Letters, Vol. 13, Issue 2, pp. 175-177 (1988)
http://dx.doi.org/10.1364/OL.13.000175


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Abstract

We analyze the waveguiding properties of the oxygen-implanted, buried-oxide, silicon-on-insulator structures currently being developed for use in microelectronics. We find that in spite of the fact that the buried-oxide layer is only a few tenths of a micrometer thick, the single-crystal overlayer can support TE0 guided-wave propagation, at subbandgap wavelengths, with losses due to substrate radiation leakage at or below the benchmark level of 1 dB/cm.

© 1988 Optical Society of America

History
Original Manuscript: September 28, 1987
Manuscript Accepted: November 10, 1987
Published: February 1, 1988

Citation
B. N. Kurdi and D. G. Hall, "Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures," Opt. Lett. 13, 175-177 (1988)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-13-2-175


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