Abstract

We report on a realistic model for optically bistable GaAs/AlGaAs Fabry–Perot étalons. The model incorporates diffraction, carrier diffusion, and heat conduction, taking all the layers of the structure into account. For the optical nonlinearity the carrier density and temperature-dependent plasma theory is used. Devices with less than a 1-K temperature rise should be possible to design.

© 1989 Optical Society of America

Model for optical bistability in GaAs/AlGaAs Fabry–Perot étalons including diffraction, carrier diffusion, and heat conduction

Ulf Olin
J. Opt. Soc. Am. B 7(1) 35-42 (1990)

Effects of diffraction and diffusion in dispersive optical bistability in Fabry–Perot étalons

Ulf Olin
J. Opt. Soc. Am. B 5(1) 20-23 (1988)

Transient grating studies of excitonic optical nonlinearities in GaAs/AlGaAs multiple-quantum-well structures

A. Miller, R. J. Manning, P. K. Milsom, D. C. Hutchings, D. W. Crust, and K. Woodbridge
J. Opt. Soc. Am. B 6(4) 567-578 (1989)

Optically controlled reflection modulator using GaAs–AlGaAs n-i-p-i/multiple-quantum-well structures

K.-K. Law, J. Maserjian, R. J. Simes, L. A. Coldren, A. C. Gossard, and J. L. Merz
Opt. Lett. 14(4) 230-232 (1989)

GaAs/AlGaAs optical synaptic interconnection device for neural networks

J. Ohta, M. Takahashi, Y. Nitta, S. Tai, K. Mitsunaga, and K. Kyuma
Opt. Lett. 14(16) 844-846 (1989)