A GaAs/AlGaAs optical synaptic interconnection device for neural networks is reported for the first time to our knowledge. This device consists of a light-emitting-diode array, an interconnection matrix, and a photodiode array, which are integrated into a hybrid-layered structure on a GaAs substrate. The device structure and characteristics are reported in detail. The fabricated device can simulate a 32-neuron system. Experimental results of the Hopfield associative memory with three stored vectors are also described.
© 1989 Optical Society of America
Original Manuscript: January 26, 1989
Manuscript Accepted: May 12, 1989
Published: August 15, 1989
J. Ohta, M. Takahashi, Y. Nitta, S. Tai, K. Mitsunaga, and K. Kyuma, "GaAs/AlGaAs optical synaptic interconnection device for neural networks," Opt. Lett. 14, 844-846 (1989)