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Optics Letters

Optics Letters


  • Vol. 14, Iss. 16 — Aug. 15, 1989
  • pp: 844–846

GaAs/AlGaAs optical synaptic interconnection device for neural networks

J. Ohta, M. Takahashi, Y. Nitta, S. Tai, K. Mitsunaga, and K. Kyuma  »View Author Affiliations

Optics Letters, Vol. 14, Issue 16, pp. 844-846 (1989)

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A GaAs/AlGaAs optical synaptic interconnection device for neural networks is reported for the first time to our knowledge. This device consists of a light-emitting-diode array, an interconnection matrix, and a photodiode array, which are integrated into a hybrid-layered structure on a GaAs substrate. The device structure and characteristics are reported in detail. The fabricated device can simulate a 32-neuron system. Experimental results of the Hopfield associative memory with three stored vectors are also described.

© 1989 Optical Society of America

Original Manuscript: January 26, 1989
Manuscript Accepted: May 12, 1989
Published: August 15, 1989

J. Ohta, M. Takahashi, Y. Nitta, S. Tai, K. Mitsunaga, and K. Kyuma, "GaAs/AlGaAs optical synaptic interconnection device for neural networks," Opt. Lett. 14, 844-846 (1989)

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