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Optics Letters

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  • Vol. 14, Iss. 17 — Sep. 1, 1989
  • pp: 961–963

Picosecond photorefractive response of GaAs:EL2, InP:Fe, and CdTe:V

George C. Valley, J. Dubard, Arthur L. Smirl, and A. M. Glass  »View Author Affiliations


Optics Letters, Vol. 14, Issue 17, pp. 961-963 (1989)
http://dx.doi.org/10.1364/OL.14.000961


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Abstract

Measurements and theoretical calculations are presented for the photorefractive effect in three semi-insulating semiconductors (GaAs:EL2, InP:Fe, and CdTe:V) using 29-psec pulses at a wavelength of 1.06 μm. The photorefractive gain is largest in the CdTe crystal and smallest in our InP sample. The major differences between the materials responsible for this are the electro-optic coefficients, the mobilities, the absorption coefficients, and the amount of electron–hole competition.

© 1989 Optical Society of America

History
Original Manuscript: March 20, 1989
Manuscript Accepted: May 23, 1989
Published: September 1, 1989

Citation
George C. Valley, J. Dubard, A. M. Glass, and Arthur L. Smirl, "Picosecond photorefractive response of GaAs:EL2, InP:Fe, and CdTe:V," Opt. Lett. 14, 961-963 (1989)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-14-17-961


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