Correlation of defect centers with second-harmonic generation in Ge-doped and Ge-P-doped silica-core single-mode fibers
Optics Letters, Vol. 14, Issue 18, pp. 1023-1025 (1989)
http://dx.doi.org/10.1364/OL.14.001023
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Abstract
The origin of frequency doubling in Ge-doped silica-core single-mode glass fibers has been investigated with electron-spin-resonance spectrometry. Correlations have been observed between the conversion efficiency and the light-induced Ge E′ center concentration.
© 1989 Optical Society of America
Citation
T. E. Tsai, M. A. Saifi, E. J. Friebele, D. L. Griscom, and U. Österberg, "Correlation of defect centers with second-harmonic generation in Ge-doped and Ge-P-doped silica-core single-mode fibers," Opt. Lett. 14, 1023-1025 (1989)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-14-18-1023
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