We present a new model, which incorporates both temperature and electron–hole effects, for two-beam coupling in photorefractive semiconductors under an external dc field E0. We show that the exponential gain Γ exhibits an intensity-dependent resonance. The application of this model to InP:Fe allows us to predict a value of Γ near 20 cm−1 for a thin sample at 1.06 μm with E0 = 10 kV/cm.
© 1989 Optical Society of America
Original Manuscript: June 1, 1989
Manuscript Accepted: October 4, 1989
Published: December 15, 1989
G. Picoli, P. Gravey, and C. Ozkul, "Model for resonant intensity dependence of photorefractive two-wave mixing in InP:Fe," Opt. Lett. 14, 1362-1364 (1989)