An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs–AlGaAs n-i-p-i doping structure with a multiple-quantum-well structure on top of a distributed Bragg reflector, all grown by molecular-beam epitaxy. A modulation of approximately 60% is obtained on our test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 μW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.
© 1989 Optical Society of America
Original Manuscript: August 26, 1988
Manuscript Accepted: November 28, 1988
Published: February 15, 1989
K.-K. Law, J. Maserjian, R. J. Simes, L. A. Coldren, A. C. Gossard, and J. L. Merz, "Optically controlled reflection modulator using GaAs–AlGaAs n-i-p-i/multiple-quantum-well structures," Opt. Lett. 14, 230-232 (1989)