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Optics Letters

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  • Vol. 14, Iss. 4 — Feb. 15, 1989
  • pp: 230–232

Optically controlled reflection modulator using GaAs–AlGaAs n-i-p-i/multiple-quantum-well structures

K.-K. Law, J. Maserjian, R. J. Simes, L. A. Coldren, A. C. Gossard, and J. L. Merz  »View Author Affiliations


Optics Letters, Vol. 14, Issue 4, pp. 230-232 (1989)
http://dx.doi.org/10.1364/OL.14.000230


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Abstract

An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs–AlGaAs n-i-p-i doping structure with a multiple-quantum-well structure on top of a distributed Bragg reflector, all grown by molecular-beam epitaxy. A modulation of approximately 60% is obtained on our test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 μW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.

© 1989 Optical Society of America

History
Original Manuscript: August 26, 1988
Manuscript Accepted: November 28, 1988
Published: February 15, 1989

Citation
K.-K. Law, J. Maserjian, R. J. Simes, L. A. Coldren, A. C. Gossard, and J. L. Merz, "Optically controlled reflection modulator using GaAs–AlGaAs n-i-p-i/multiple-quantum-well structures," Opt. Lett. 14, 230-232 (1989)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-14-4-230


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References

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