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  • Vol. 14, Iss. 7 — Apr. 1, 1989
  • pp: 356–358

Many-body effects in gain and refractive-index spectra of bulk and quantum-well semiconductor lasers

C. Ell, H. Haug, and S. W. Koch  »View Author Affiliations


Optics Letters, Vol. 14, Issue 7, pp. 356-358 (1989)
http://dx.doi.org/10.1364/OL.14.000356


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Abstract

Gain and refractive-index spectra for bulk and quantum-well semiconductor lasers are computed using quantum-mechanical many-body theory. The results clearly show the influence of band-gap renormalization, broadening, and Coulomb enhancement on the gain, the absorption, and the refractive-index spectra.

© 1989 Optical Society of America

History
Original Manuscript: October 31, 1988
Manuscript Accepted: January 20, 1989
Published: April 1, 1989

Citation
C. Ell, H. Haug, and S. W. Koch, "Many-body effects in gain and refractive-index spectra of bulk and quantum-well semiconductor lasers," Opt. Lett. 14, 356-358 (1989)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-14-7-356


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References

  1. A. Yariv, Optical Electronics, 3rd ed. (Holt, Rinehart & Winston, New York, 1985).
  2. G. P. Agarwal, N. K. Dutta, Long-Wavelength Semiconductor Lasers (Van Nostrand Reinhold, New York, 1986). [CrossRef]
  3. G. H. B. Thompson, Physics of Semiconductor Laser Devices (Wiley, Chichester, UK, 1980).
  4. H. Haug, S. W. Koch, Phys. Rev. A 39, 1887 (1989). [CrossRef] [PubMed]
  5. See, e.g., H. Haug, ed., Optical Nonlinearities and Instabilities in Semiconductors (Academic, New York, 1988); H. Haug, S. Schmitt-Rink, Prog. Quantum Electron. 9, 3 (1984); J. Opt. Soc. Am. B 2, 1135 (1985); L. Banyai, S. W. Koch, Z. Phys. B63, 283 (1986); S. Schmitt-Rink, C. Ell, H. Haug, Phys. Rev. B 33, 1183 (1986). [CrossRef]
  6. J. R. Müller, R. Mewis, H. Haug, Z. Phys. B69, 231 (1987). [CrossRef]
  7. M. Lindberg, S. W. Koch, Phys. Rev. B 38, 3342 (1988). [CrossRef]
  8. M. P. Kessler, E. P. Ippen, Appl. Phys. Lett. 51, 1765 (1987). [CrossRef]
  9. P. R. Gaves-Morris, ed., Padé Approximants and Their Application (Academic, New York, 1973).
  10. The material parameters for bulk GaAs are ER = 4.2 meV, a0 = 12.4 nm, me = 0.0665m0, mh = 0.52m0, and Ħγ = 1ER (0.1ER) for T = 300 K (10 K). Eg = 1522 meV − 0.58T2/(T + 226 K) meV/K according to C. K. Kim, P. Lautenschlager, M. Cardona, Solid State Commun. 59, 797 (1986). [CrossRef]
  11. For quasi-two-dimensional GaAs we take the bulk parameters, except that Eg is increased by 120 meV. The energies are scaled to the three-dimensional Rydberg energy.

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