A new multistage diode-array injection-locking technique is demonstrated. This approach permits higher power extraction or higher overall gain to be achieved than possible with single-stage designs. Using two antireflection-coated 40-stripe multiple-quantum-well diode arrays, we characterize the amplifier small-signal and saturated gain performance. More than 500 mW of power is achieved with single frequency and narrow linewidth in a nearly diffraction-limited far-field lobe. With small-signal inputs, an overall gain of 25 dB with 290-mW locked output is obtained.
© 1990 Optical Society of America
Original Manuscript: January 9, 1990
Manuscript Accepted: April 4, 1990
Published: July 1, 1990
L. Y. Pang, J. G. Fujimoto, and E. S. Kintzer, "Two-stage injection locking of high-power semiconductor arrays," Opt. Lett. 15, 728-730 (1990)