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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Vol. 15, Iss. 13 — Jul. 1, 1990
  • pp: 728–730

Two-stage injection locking of high-power semiconductor arrays

L. Y. Pang, E. S. Kintzer, and J. G. Fujimoto  »View Author Affiliations


Optics Letters, Vol. 15, Issue 13, pp. 728-730 (1990)
http://dx.doi.org/10.1364/OL.15.000728


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Abstract

A new multistage diode-array injection-locking technique is demonstrated. This approach permits higher power extraction or higher overall gain to be achieved than possible with single-stage designs. Using two antireflection-coated 40-stripe multiple-quantum-well diode arrays, we characterize the amplifier small-signal and saturated gain performance. More than 500 mW of power is achieved with single frequency and narrow linewidth in a nearly diffraction-limited far-field lobe. With small-signal inputs, an overall gain of 25 dB with 290-mW locked output is obtained.

© 1990 Optical Society of America

History
Original Manuscript: January 9, 1990
Manuscript Accepted: April 4, 1990
Published: July 1, 1990

Citation
L. Y. Pang, J. G. Fujimoto, and E. S. Kintzer, "Two-stage injection locking of high-power semiconductor arrays," Opt. Lett. 15, 728-730 (1990)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-15-13-728

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