Abstract
The signs of the third-order optical nonlinear susceptibility χ(3) of polysilanehave been determined to be negative at 532 nm and positive at 1064 nm from single-beam Z-scan measurements. The small and positive χ(3) at 1064 nm arises from the bound-electronic process. The negative χ(3) at 532 nm is attributed to two-photon absorption resonance transition.
© 1991 Optical Society of America
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