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Optics Letters

Optics Letters


  • Vol. 16, Iss. 8 — Apr. 15, 1991
  • pp: 611–613

Variable-sensitivity photodetector that uses a metal–semiconductor–metal structure for optical neural networks

Y. Nitta, J. Ohta, S. Tai, and K. Kyuma  »View Author Affiliations

Optics Letters, Vol. 16, Issue 8, pp. 611-613 (1991)

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A novel type of photodetector called a variable-sensitivity photodetector has been developed for optical implementation of neural networks. It utilizes a metal–semiconductor–metal structure whose quantum efficiency can be modulated by an applied bias voltage. A linear dependence of the sensitivity on the bias voltage was obtained with the bipolar current flow. This device operated as a multiplier of the incident light intensity and the bias voltage. It is shown that this device is suitable for achieving dynamic synaptic interconnections. A 4 × 4 array device was fabricated and demonstrated.

© 1991 Optical Society of America

Original Manuscript: November 2, 1990
Revised Manuscript: February 21, 1991
Manuscript Accepted: January 24, 1991
Published: April 15, 1991

Y. Nitta, J. Ohta, S. Tai, and K. Kyuma, "Variable-sensitivity photodetector that uses a metal–semiconductor–metal structure for optical neural networks," Opt. Lett. 16, 611-613 (1991)

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