Abstract
A novel type of photodetector called a variable-sensitivity photodetector has been developed for optical implementation of neural networks. It utilizes a metal–semiconductor–metal structure whose quantum efficiency can be modulated by an applied bias voltage. A linear dependence of the sensitivity on the bias voltage was obtained with the bipolar current flow. This device operated as a multiplier of the incident light intensity and the bias voltage. It is shown that this device is suitable for achieving dynamic synaptic interconnections. A 4 × 4 array device was fabricated and demonstrated.
© 1991 Optical Society of America
Full Article | PDF ArticleMore Like This
J. Ohta, Y. Nitta, and K. Kyuma
Opt. Lett. 16(10) 744-746 (1991)
Yoshikazu Nitta, Jun Ohta, Syuichi Tai, and Kazuo Kyuma
Appl. Opt. 32(8) 1264-1274 (1993)
R. I. MacDonald and S. S. Lee
Appl. Opt. 30(2) 176-179 (1991)