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Optics Letters

Optics Letters


  • Vol. 17, Iss. 1 — Jan. 1, 1992
  • pp: 55–57

Properties of an external-cavity traveling-wave semiconductor ring laser

En. T. Peng and C. B. Su  »View Author Affiliations

Optics Letters, Vol. 17, Issue 1, pp. 55-57 (1992)

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We describe the lasing characteristics of an external-cavity 1.3-μm-wavelength traveling-wave semiconductor laser that uses a tilted-stripe optical amplifier. It was found that within a 45-nm-wavelength tuning range the power level does not suffer any discontinuous change. The lasing spectrum remains single mode within a 35-nm range, and the linewidth is less than 50 kHz. The lasing frequency is stable and changes by only 25 MHz/°C and by approximately 1.6 MHz/mA. For cw operation the intracavity power reaches 24 mW, and for long-pulse operation the power level is as high as 175 mW. The lasing power level exhibits long-term stability. Moreover the intracavity power level is found to be insensitive to the coupled output power.

© 1992 Optical Society of America

Original Manuscript: August 9, 1991
Published: January 1, 1992

En. T. Peng and C. B. Su, "Properties of an external-cavity traveling-wave semiconductor ring laser," Opt. Lett. 17, 55-57 (1992)

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