We demonstrate femtosecond all-optical switching in both symmetric and asymmetric nonlinear X junctions, fabricated in AlGaAs channel waveguides at 1555 nm with photon energies below one half the semiconductor band gap. The switching is a consequence of optically induced symmetry breaking within the junction.
© 1993 Optical Society of America
Original Manuscript: March 8, 1993
Published: July 15, 1993
J. S. Aitchison, A. Villeneuve, and G. I. Stegeman, "All-optical switching in a nonlinear GaAlAs X junction," Opt. Lett. 18, 1153-1155 (1993)