A discrete transverse electro-optic response associated with a field-induced antiferroelectric–ferroelectric phase transition has been observed to exist in lead zirconate thin films grown on Pt/Ti-coated silicon substrates. The magnitude of the birefringence jump from the antiferroelectric to the ferroelectric state is approximately 2.5 × 10−2. Quantitative correlation between the field-induced birefringence and the polarization was also experimentally studied. The discrete birefringent change in the thin films may be a desirable property for applications in optical switches or other integrated-optical devices.
© 1993 Optical Society of America
Original Manuscript: May 4, 1993
Published: October 1, 1993
Feiling Wang, Kewen K. Li, Eugene Furman, and Gene H. Haertling, "Discrete electro-optic response in lead zirconate thin films from a field-induced phase transition," Opt. Lett. 18, 1615-1617 (1993)