The effect of additive-pulse mode locking on a semiconductor laser is studied experimentally. We reduced the pulse duration from 19 to 6 ps with an external auxiliary cavity containing a 1.3-m fiber in a synchronously pumped external-cavity surface-emitting In0.53Ga0.47 As laser. The relatively weak effect of additive-pulse mode locking on pulse shortening is primarily due to the large gain cross section of the semiconductor active medium in this system.
© 1993 Optical Society of America
Original Manuscript: April 22, 1993
Published: October 1, 1993
K. Watanabe, H. Iwamura, and Y. Yamamoto, "Effect of additive-pulse mode locking on an external-cavity surface-emitting InGaAs semiconductor laser," Opt. Lett. 18, 1642-1644 (1993)