Effect of additive-pulse mode locking on an external-cavity surface-emitting InGaAs semiconductor laser
Optics Letters, Vol. 18, Issue 19, pp. 1642-1644 (1993)
http://dx.doi.org/10.1364/OL.18.001642
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Abstract
The effect of additive-pulse mode locking on a semiconductor laser is studied experimentally. We reduced the pulse duration from 19 to 6 ps with an external auxiliary cavity containing a 1.3-m fiber in a synchronously pumped external-cavity surface-emitting 1n0.53Ga0.47As laser. The relatively weak effect of additive-pulse mode locking on pulse shortening is primarily due to the large gain cross section of the semiconductor active medium in this system.
© 1993 Optical Society of America
Citation
K. Watanabe, H. Iwamura, and Y. Yamamoto, "Effect of additive-pulse mode locking on an external-cavity surface-emitting InGaAs semiconductor laser," Opt. Lett. 18, 1642-1644 (1993)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-18-19-1642
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