The dynamical properties of dispersive optical bistability in a semiconductor laser biased from below to above threshold are investigated both experimentally and theoretically. The optical bistability switch-off time is found to decrease continuously from below to above threshold. A fast switch-off in less than 100 ps has been observed when the laser operates in the injection-locked condition.
© 1993 Optical Society of America
Original Manuscript: May 19, 1993
Published: October 15, 1993
R. Hui, A. Paradisi, S. Benedetto, and I. Montrosset, "Dynamics of optically switched bistable laser diodes in the injection-locked state," Opt. Lett. 18, 1733-1735 (1993)