Surface-emitting second-harmonic generation in a semiconductor vertical resonator
Optics Letters, Vol. 18, Issue 21, pp. 1798-1800 (1993)
http://dx.doi.org/10.1364/OL.18.001798
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Abstract
We experimentally demonstrate a 240-fold increase in the efficiency of an AlGaAs/ALAs surface-emitting second-harmonic generation device by embedding the waveguide core in a monolithic vertical resonant cavity. Calculations indicate that conversion efficiencies of several percent per watt for second-harmonic generation of green or blue light may be expected in an optimized semiconductor resonant vertical-cavity surface emitter.
© 1993 Optical Society of America
Citation
R. Lodenkamper, M. L. Bortz, M. M. Fejer, K. Bacher, and J. S. Harris, Jr., "Surface-emitting second-harmonic generation in a semiconductor vertical resonator," Opt. Lett. 18, 1798-1800 (1993)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-18-21-1798
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