As much as 47 μW of cw infrared radiation and 89 μW of pulsed infrared radiation, tunable near 4.3 μm, have been generated by mixing the outputs of a high-power tapered semiconductor amplifier at 858 nm (signal wave) and a Ti:Al2O3 laser at 715 nm (pump wave) in AgGaS2. The GaAlAs tapered traveling-wave amplifier delivered as much as 1.5 W of diffraction-limited cw power into the nonlinear crystal. Output powers, conversion efficiencies, and spectral characteristics of this novel midinfrared source are discussed.
© 1993 Optical Society of America
Original Manuscript: July 2, 1993
Published: November 15, 1993
Ulrich Simon, Lew Goldberg, and Frank K. Tittel, "Difference-frequency mixing in AgGaS2 by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm," Opt. Lett. 18, 1931-1933 (1993)