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Optics Letters

Optics Letters


  • Vol. 18, Iss. 22 — Nov. 15, 1993
  • pp: 1931–1933

Difference-frequency mixing in AgGaS2 by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm

Ulrich Simon, Frank K. Tittel, and Lew Goldberg  »View Author Affiliations

Optics Letters, Vol. 18, Issue 22, pp. 1931-1933 (1993)

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As much as 47 μW of cw infrared radiation and 89 μW of pulsed infrared radiation, tunable near 4.3 μm, have been generated by mixing the outputs of a high-power tapered semiconductor amplifier at 858 nm (signal wave) and a Ti:Al2O3 laser at 715 nm (pump wave) in AgGaS2. The GaAlAs tapered traveling-wave amplifier delivered as much as 1.5 W of diffraction-limited cw power into the nonlinear crystal. Output powers, conversion efficiencies, and spectral characteristics of this novel midinfrared source are discussed.

© 1993 Optical Society of America

Original Manuscript: July 2, 1993
Published: November 15, 1993

Ulrich Simon, Lew Goldberg, and Frank K. Tittel, "Difference-frequency mixing in AgGaS2 by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm," Opt. Lett. 18, 1931-1933 (1993)

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  1. P. Canarelli, Z. Benko, R. F. Curl, F. K. Tittel, J. Opt. Soc. Am. B 9, 197 (1992). [CrossRef]
  2. A. H. Hielscher, C. E. Miller, D. C. Bayard, U. Simon, K. P. Smolka, R. F. Curl, F. K. Tittel, J. Opt. Soc. Am. B 9, 1962 (1992). [CrossRef]
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  10. D. Mehuys, L. Goldberg, D. Melch, “5.25-Watt diffraction-limited, tapered strip semiconductor optical amplifier,”IEEE Photon. Technol. Lett. (to be published).
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