Difference-frequency mixing in AgGaS2 by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm
Optics Letters, Vol. 18, Issue 22, pp. 1931-1933 (1993)
http://dx.doi.org/10.1364/OL.18.001931
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Abstract
As much as 47 µW of cw infrared radiation and 89 µW of pulsed infrared radiation, tunable near 4.3 µm, have been generated by mixing the outputs of a high-power tapered semiconductor amplifier at 858 nm (signal wave) and a Ti:Al2O3 laser at 715 nm (pump wave) in AgGaS2. The GaAlAs tapered traveling-wave amplifier delivered as much as 1.5 W of diffraction-limited cw power into the nonlinear crystal. Output powers, conversion efficiencies, and spectral characteristics of this novel midinfrared source are discussed.
© 1993 Optical Society of America
Citation
Ulrich Simon, Frank K. Tittel, and Lew Goldberg, "Difference-frequency mixing in AgGaS2 by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm," Opt. Lett. 18, 1931-1933 (1993)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-18-22-1931
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