Photoconductive semiconductors that contain deep-level traps can be used as optical phase detectors because of the photocurrents generated by moving space-charge electric fields formed inside the material by transient optical interference patterns. Two narrow-linewidth Nd:YAG nonplanar ring oscillator lasers were successfully phase locked with InP:Fe, GaAs:Cr, GaAs, and CdTe:V crystals used as optical phase detectors.
© 1994 Optical Society of America
Original Manuscript: January 25, 1994
Published: June 1, 1994
Frederic Davidson, Sudhir Trivedi, and Chen-Chia Wang, "Optical phase-lock loops with photoconductive semiconductor phase detectors," Opt. Lett. 19, 774-776 (1994)