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Optics Letters

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  • Vol. 19, Iss. 11 — Jun. 1, 1994
  • pp: 846–848

Nanosecond single-photon timing with InGaAs/InP photodiodes

F. Zappa, A. Lacaita, S. Cova, and P. Webb  »View Author Affiliations


Optics Letters, Vol. 19, Issue 11, pp. 846-848 (1994)
http://dx.doi.org/10.1364/OL.19.000846


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Abstract

We demonstrate that separate absorption and multiplication InGaAs/InP avalanche photodiodes can work biased above the breakdown voltage and detect the arrival time of single photons with 1-ns resolution and a noise-equivalent power of 1 × 10−14 W/Hz1/2 at 150 K. We investigated the performance of various samples, cooling the detectors from different temperatures down to 50 K. These devices are suitable for the detection of short optical pulses in the near-infrared range up to a 1.55-μm wavelength, for the characterization of optical communication components, and for luminescence and radiative decay measurements.

© 1994 Optical Society of America

History
Original Manuscript: January 3, 1994
Published: June 1, 1994

Citation
F. Zappa, P. Webb, A. Lacaita, and S. Cova, "Nanosecond single-photon timing with InGaAs/InP photodiodes," Opt. Lett. 19, 846-848 (1994)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-19-11-846


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References

  1. H. Z. Cummins, E. R. Pike, Photon Correlation Spectroscopy and Velocimetry (Plenum, New York, 1977), Chap. 1, p. 20.
  2. A. W. Lightstone, R. J. McIntyre, IEEE Trans. Electron. Devices ED-28, 1210 (1981). [CrossRef]
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  5. A. Lacaita, P. A. Francese, F. Zappa, S. Cova, “Single-photon detection beyond 1 μm: performance of commercially available germanium photodiodes,” Appl. Opt. (to be published).
  6. B. F. Levine, C. G. Bethea, Appl. Phys. Lett. 46, 333 (1985). [CrossRef]
  7. P. P. Webb, W. R. Clark, Proc. Soc. Photo-Opt. Instrum. Eng. 1627, 32 (1992).
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  9. G. Ripamonti, A. Lacaita, Proc. Soc. Photo-Opt. Instrum. Eng. 1797, 38 (1992).

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