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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Vol. 19, Iss. 21 — Nov. 1, 1994
  • pp: 1744–1746

Semiconductor lasers without population inversion

A. Imamoğlu and R. J. Ram  »View Author Affiliations


Optics Letters, Vol. 19, Issue 21, pp. 1744-1746 (1994)
http://dx.doi.org/10.1364/OL.19.001744


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Abstract

We propose a new scheme for lasing without population inversion that utilizes interferences in double-quantum-well intersubband transitions. In contrast to the previous inversionless laser schemes based on atomic systems, the new proposal permits us to use band-gap engineering to choose the subband energies, coupling strengths, and decay rates, as desired, and permits us to create a laser system that does not require population inversion. We present detailed calculations on a specific scheme and discuss possible extensions.

© 1994 Optical Society of America

History
Original Manuscript: June 17, 1994
Published: November 1, 1994

Citation
A. Imamoğlu and R. J. Ram, "Semiconductor lasers without population inversion," Opt. Lett. 19, 1744-1746 (1994)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-19-21-1744


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