We propose a new scheme for lasing without population inversion that utilizes interferences in double-quantum-well intersubband transitions. In contrast to the previous inversionless laser schemes based on atomic systems, the new proposal permits us to use band-gap engineering to choose the subband energies, coupling strengths, and decay rates, as desired, and permits us to create a laser system that does not require population inversion. We present detailed calculations on a specific scheme and discuss possible extensions.
© 1994 Optical Society of America
Original Manuscript: June 17, 1994
Published: November 1, 1994
A. Imamoḡlu and R. J. Ram, "Semiconductor lasers without population inversion," Opt. Lett. 19, 1744-1746 (1994)