We report the results of extreme-ultraviolet reflectance measurements and structural characterization of multilayer mirrors made by sequential sputter deposition of Si and B4C. Compared with Si/Mo multilayers, Si/B4C have a much narrower bandpass (δλ) and better off-peak rejection but lower peak reflectance (R0). Mirrors with three different designs gave the following results: R0 = 0.275 and δλ = 0.31 nm at 13.1 nm and normal incidence; R0 = 0.34 and δλ = 1.1 nm at 18.2 nm and 45°; and R0 = 0.30 and δλ= 2.0 nm at 23.6 nm and 45°. These multilayers exhibited excellent stability on annealing at temperatures up to 600°C.
© 1994 Optical Society of America
Original Manuscript: June 6, 1994
Published: November 1, 1994
J. M. Slaughter, R. N. Watts, Charles M. Falco, C. Tarrio, Brian S. Medower, and T. B. Lucatorto, "Si/B4C narrow-bandpass mirrors for the extreme ultraviolet," Opt. Lett. 19, 1786-1788 (1994)