We present studies of the photorefractive effect in nonphotorefractive orientations of liquid-encapsulated Czochralski-grown GaAs crystals. Picosecond diffraction experiments conducted in different samples show that a forbidden photorefractive signal correlates well with dislocation density, which points out that the effect arises from strain fields and growth defects.
© 1994 Optical Society of America
Original Manuscript: April 19, 1994
Published: December 1, 1994
K. Jarasiunas, P. Delaye, G. Roosen, and J. Vaitkus, "Dislocation density-dependent photorefractive effect in (001)-cut GaAs," Opt. Lett. 19, 1946-1948 (1994)