We present studies of the photorefractive effect in nonphotorefractive orientations of liquid-encapsulated Czochralski-grown GaAs crystals. Picosecond diffraction experiments conducted in different samples show that a forbidden photorefractive signal correlates well with dislocation density, which points out that the effect arises from strain fields and growth defects.
© 1994 Optical Society of America
K. Jarasiunas, J. Vaitkus, P. Delaye, and G. Roosen, "Dislocation density-dependent photorefractive effect in (001)-cut GaAs," Opt. Lett. 19, 1946-1948 (1994)