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Optics Letters

Optics Letters


  • Vol. 19, Iss. 23 — Dec. 1, 1994
  • pp: 1994–1996

Modeling of terahertz radiation from biased photoconductors: transient velocity effects

G. Rodriguez, S. R. Caceres, and A. J. Taylor  »View Author Affiliations

Optics Letters, Vol. 19, Issue 23, pp. 1994-1996 (1994)

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We include transient carrier velocity dynamics in a model describing the terahertz radiation from a large-aperture, biased photoconductor triggered by an ultrashort optical pulse. Waveforms of the radiated electric field are calculated as a function of optical excitation fluence and bias field. The model is applied to terahertz generation in biased GaAs photoconductors.

© 1994 Optical Society of America

Original Manuscript: June 10, 1994
Published: December 1, 1994

G. Rodriguez, S. R. Caceres, and A. J. Taylor, "Modeling of terahertz radiation from biased photoconductors: transient velocity effects," Opt. Lett. 19, 1994-1996 (1994)

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  1. J. T. Darrow, X.-C. Zhang, D. H. Auston, J. D. Morse, IEEE J. Quantum Electron. 28, 1607 (1992). [CrossRef]
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  8. The data in Fig. 1 of Ref. 6 can be fitted by a mobility, μ(t, t′)> given by Eq. (4), with μf = 7500 cm2/V s and τa = 2.5 ps for Eb = 1 kV/cm, μf = 6100 cm2/V s and τa = 2 ps for Eb = 3 kV/cm, μf = 3800 cm2/V s and τa = 1.5 ps for Eb = 5 kV/cm, and μf = 1150 cm2/V s and τa = 0.25 ps for Eb = 10 kV/cm.

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