Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser
Optics Letters, Vol. 20, Issue 10, pp. 1145-1147 (1995)
http://dx.doi.org/10.1364/OL.20.001145
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Abstract
Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO3 crystal generated the 430-nm second harmonic, which was doubled by a β-BaB2O4 crystal, producing tunable UV radiation with as much as 15 µW of average power.
© 1995 Optical Society of America
Citation
Lew Goldberg and Dahv A. V. Kliner, "Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser," Opt. Lett. 20, 1145-1147 (1995)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-20-10-1145
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