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  • Vol. 20, Iss. 10 — May. 15, 1995
  • pp: 1154–1156

Broadband multilayer antireflection coating for semiconductor laser facets

David M. Braun and Roger L. Jungerman  »View Author Affiliations


Optics Letters, Vol. 20, Issue 10, pp. 1154-1156 (1995)
http://dx.doi.org/10.1364/OL.20.001154


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Abstract

Using a triple-layer antireflection coating of Al2O3, Si, and SiO2, we have achieved a minimum facet reflectivity of 1 × 10−6 and a bandwidth of 90 nm for a reflectivity of 5 × 10−5 or less for 1550-nm center-wavelength InGaAsP semiconductor lasers. A facet reflectivity of 3 × 10−6 and a bandwidth of 30 nm for a reflectivity of 5 × 10−5 were achieved for 1310-nm InGaAsP lasers. This coating is applicable to broadband external-cavity-tuned laser sources, edge-emitting light-emitting diodes, and semiconductor laser amplifiers.

© 1995 Optical Society of America

History
Original Manuscript: January 10, 1995
Published: May 15, 1995

Citation
David M. Braun and Roger L. Jungerman, "Broadband multilayer antireflection coating for semiconductor laser facets," Opt. Lett. 20, 1154-1156 (1995)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-20-10-1154


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