Using a triple-layer antireflection coating of Al2O3, Si, and SiO2, we have achieved a minimum facet reflectivity of 1 × 10−6 and a bandwidth of 90 nm for a reflectivity of 5 × 10−5 or less for 1550-nm center-wavelength InGaAsP semiconductor lasers. A facet reflectivity of 3 × 10−6 and a bandwidth of 30 nm for a reflectivity of 5 × 10−5 were achieved for 1310-nm InGaAsP lasers. This coating is applicable to broadband external-cavity-tuned laser sources, edge-emitting light-emitting diodes, and semiconductor laser amplifiers.
© 1995 Optical Society of America
Original Manuscript: January 10, 1995
Published: May 15, 1995
David M. Braun and Roger L. Jungerman, "Broadband multilayer antireflection coating for semiconductor laser facets," Opt. Lett. 20, 1154-1156 (1995)