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Forced TM-mode operation of a GaAlAs laser diode by use of annealed proton-exchanged LiNbO3 and LiTaO3 waveguides

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Abstract

Forced TM-mode operation of GaAlAs laser diode by use of annealed proton-exchanged LiNbO3 and LiTaO3 waveguides as the polarizing element in an external cavity is demonstrated. The results are compared with those for an external cavity that uses a bulk polarizer. The dependence of such factors as the amount and polarization of the feedback in these external cavity configurations is discussed.

© 1995 Optical Society of America

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