Abstract

A treatment of the dynamics in a semiconductor laser that is based on the coupled Maxwell–semiconductor– Bloch equations is described. It is shown that intraband carrier dynamics and interband Coulomb interactions significantly affect the damping of relaxation oscillations. The specific case of a vertical-cavity surface-emitting laser is treated.

© 1995 Optical Society of America

Transient nonequilibrium and many-body effects in semiconductor microcavity lasers

F. Jahnke, K. Henneberger, W. Schäfer, and S. W. Koch
J. Opt. Soc. Am. B 10(12) 2394-2405 (1993)

Many-body effects in gain and refractive-index spectra of bulk and quantum-well semiconductor lasers

C. Ell, H. Haug, and S. W. Koch
Opt. Lett. 14(7) 356-358 (1989)

Chirped-pulse control of carriers in semiconductors: the role of many-body effects

Boris D. Fainberg, B. Levinsky, and V. A. Gorbunov
J. Opt. Soc. Am. B 22(12) 2715-2727 (2005)

Relaxation-oscillation-induced chaotic instabilities in modulated external-cavity semiconductor lasers

Benson C. Lam, Mikhail M. Sushchik, Henry D. I. Abarbanel, Albert L. Kellner, and Paul K. L. Yu
J. Opt. Soc. Am. B 12(6) 1150-1156 (1995)

Interpretation of relaxation oscillations of semiconductor lasers in terms of the dynamic Stark effect

B. Thedrez and R. Frey
Opt. Lett. 13(2) 105-107 (1988)