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Optics Letters

Optics Letters


  • Vol. 21, Iss. 11 — Jun. 1, 1996
  • pp: 818–820

Optical dephasing mechanisms in Tm3+:Y2Si2O7

G. M. Wang, R. W. Equall, R. L. Cone, M. J. M. Leask, K. W. Godfrey, and F. R. Wondre  »View Author Affiliations

Optics Letters, Vol. 21, Issue 11, pp. 818-820 (1996)

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Optical dephasing measurements are reported for Tm3+:Y2Si2O7 as a function of temperature and laser excitation intensity. By use of photon echoes, a coherence time of T2 = 23 μs was measured at 1.24 K for the 3H6(1) → 3H4(1) transition at 790.427 nm, corresponding to a homogeneous linewidth of 14 kHz. The relatively broad inhomogeneous linewidth of 100 GHz gives an inhomogeneous-to-homogeneous linewidth ratio of Γinhh = 7 × 106. This large ratio, a transition wavelength suitable for GaAlAs semiconductor lasers, and the absence of hyperfine structure hole burning make this material a good candidate for time-domain signal processing and transient optically addressed data storage.

© 1996 Optical Society of America

Original Manuscript: November 7, 1995
Published: June 1, 1996

G. M. Wang, M. J. M. Leask, K. W. Godfrey, R. W. Equall, R. L. Cone, and F. R. Wondre, "Optical dephasing mechanisms in Tm3+:Y2Si2O7," Opt. Lett. 21, 818-820 (1996)

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