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  • Vol. 21, Iss. 13 — Jul. 1, 1996
  • pp: 985–987

Tunable Fano interference in intersubband absorption

Jérome Faist, Carlo Sirtori, Federico Capasso, Sung-Nee G. Chu, Loren N. Pfeiffer, and Ken W. West  »View Author Affiliations


Optics Letters, Vol. 21, Issue 13, pp. 985-987 (1996)
http://dx.doi.org/10.1364/OL.21.000985


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Abstract

New modulation-doped quantum semiconductor structures that exhibit strong Fano interference effects have been designed and demonstrated. Intersubband absorption experiments clearly demonstrate the ability to engineer Fano resonances and their evolution toward bound-to-bound transitions as the continuum is progressively modified under the action of an electric field normal to the layers.

© 1996 Optical Society of America

History
Original Manuscript: January 4, 1996
Published: July 1, 1996

Citation
Jérome Faist, Carlo Sirtori, Federico Capasso, Sung-Nee G. Chu, Loren N. Pfeiffer, and Ken W. West, "Tunable Fano interference in intersubband absorption," Opt. Lett. 21, 985-987 (1996)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-21-13-985


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References

  1. U. Fano, Phys. Rev. 124, 1866 (1961). [CrossRef]
  2. L. A. O. Nunes, L. Ioriatti, L. T. Florez, J. P. Harbinson, Phys. Rev. B 47, 13011 (1993); D. Y. Oberli, G. Böhm, G. Weimann, Phys. Rev. B 49, 5757 (1994); theoretical predictions of Fano effects in heterostructures can be found inK. Mashke, P. Thomas, E. O. Göbel, Phys. Rev. Lett. 67, 2646 (1991); K. J. Jin, S. H. Pan, G. Z. Yang, Phys. Rev. B 51, 9764 (1995). [CrossRef]
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  5. A. Imamoglu, R. J. Ram, Opt. Lett. 19,1744 (1994). [CrossRef] [PubMed]
  6. J. Faist, F. Capasso, A. L. Hutchinson, L. Pfeiffer, K. W. West, Phys. Rev. Lett. 71, 3573 (1993). [CrossRef] [PubMed]
  7. J. Faist, C. Sirtori, F. Capasso, L. Pfeiffer, K. W. West, Appl. Phys. Lett. 64, 872 (1994). [CrossRef]
  8. The phase of the wave function is fixed by the AlGaAs barrier on the right-hand side of Fig. 1, assumed to be infinitely thick.
  9. A small baseline correction (~λ3) is subtracted to take into account the free-carrier absorption of the electrons that are removed from the quantum wells and moved into the Al0.165Ga0.835As barrier by the field at U = −5 V.
  10. The spectra were calculated self-consistently in the envelope function approximation, incorporating the nonparabolicity by an approach described inC. Sirtori, F. Capasso, J. Faist, S. Scandolo, Phys. Rev. B 50, 8663 (1994). The discontinuity ΔEc = 0.298 eV for the aluminum content x = 33%, ΔEc = 0.145 eV for x = 16.5%, the nonparabolicity coefficient γ = 5.8 × 10−19 m2, and the effective mass m*/m0 = 0.067 + 0.057x were used. [CrossRef]
  11. F. Capasso, C. Sirtori, J. Faist, D. L. Sivco, A. L. Hutchinson, S. N. G. Chu, A. Y. Cho, Nature (London) 358, 565 (1992). [CrossRef]

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