New modulation-doped quantum semiconductor structures that exhibit strong Fano interference effects have been designed and demonstrated. Intersubband absorption experiments clearly demonstrate the ability to engineer Fano resonances and their evolution toward bound-to-bound transitions as the continuum is progressively modified under the action of an electric field normal to the layers.
© 1996 Optical Society of America
Original Manuscript: January 4, 1996
Published: July 1, 1996
Jérome Faist, Carlo Sirtori, Federico Capasso, Sung-Nee G. Chu, Loren N. Pfeiffer, and Ken W. West, "Tunable Fano interference in intersubband absorption," Opt. Lett. 21, 985-987 (1996)