We demonstrate what we believe to be the first experimental observation of self-trapping and self-deflection of a planar optical beam by the photorefractive effect in a semiconductor. The semiconductor material is indium phosphide doped with iron. We show that the observed focusing and defocusing effects follow the component of the two-wave-mixing space charge field that is in phase with the intensity pattern, whereas the spatial beam deflection effects follow the 90°-shifted component.
© 1996 Optical Society of America
M. Chauvet, S. A. Hawkins, G. J. Salamo, M. Segev, D. F. Bliss, and G. Bryant, "Self-trapping of planar optical beams by use of the photorefractive effect in InP:Fe," Opt. Lett. 21, 1333-1335 (1996)