Abstract

GeO₂–SiO₂ thin glass films were prepared by the rf sputtering deposition method. Changes in the refractive index of −3% and in the volume of 118% were induced in the film by irradiation with excimer-laser pulses. Bragg gratings a (periodic surface-relief pattern with a sinusoidal wave) have been written in the film by irradiation through a phase mask.

© 1996 Optical Society of America

Bragg gratings printed upon thin glass films by excimer laser irradiation and selective chemical etching

Junji Nishii and Hiroshi Yamanaka
Appl. Opt. 36(27) 6852-6856 (1997)

Photosensitive GeO₂—SiO₂ films for ultraviolet laser writing of channel waveguides and Bragg gratings with Cr-loaded waveguide structure

Masahide Takahashi, Akifumi Sakoh, Kentaro Ichii, Yomei Tokuda, Toshinobu Yoko, and Junji Nishii
Appl. Opt. 42(22) 4594-4598 (2003)

Characterization of a highly photorefractive RF-sputtered SiO₂-GeO₂ waveguide

S. Sebastiani, G. Nunzi Conti, S. Pelli, G. C. Righini, A. Chiasera, M. Ferrari, and C. Tosello
Opt. Express 13(5) 1696-1701 (2005)

High photosensitivity and nanometer-scale phase separation in GeO₂–SiO₂ glass thin films

Hideo Hosono and Junji Nishii
Opt. Lett. 24(19) 1352-1354 (1999)

Temperature sensitivity of Ge–B–SiO₂ waveguide Bragg gratings on a crystallized glass substrate

Kenji Kintaka, Junji Nishii, Yasushi Kawamoto, Akihiko Sakamoto, and Peter G. Kazansky
Opt. Lett. 27(16) 1394-1396 (2002)