Modulation Z-scan technique for characterization of photorefractive crystals
Optics Letters, Vol. 21, Issue 19, pp. 1541-1543 (1996)
http://dx.doi.org/10.1364/OL.21.001541
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Abstract
We propose a simple single-beam configuration for characterization of the amplitude, speed of growth, and polarization properties of the photoinduced refractive-index change that is due to a drift photorefractive mechanism of nonlinearity in crystals, namely, the modulation Z-scan technique, based on the modulation of an externally applied electric field. The results of a simple theoretical model developed for one-dimensional parabolic photorefractive lens formation in this configuration are illustrated by original experiments with a semi-insulating GaAs crystal at λ -1.06 µm.
© 1996 Optical Society of America
Citation
P. A. Marquez Aguilar, J. J. Sanchez Mondragon, and S. Stepanov, "Modulation Z-scan technique for characterization of photorefractive crystals," Opt. Lett. 21, 1541-1543 (1996)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-21-19-1541
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