A silicon-on insulator (SOI) zero-gap directional coupler switch is studied based on the large-cross-section single-mode rib waveguide condition, the dual-mode interference principle, and the free-carrier plasma dispersion effect, in which the SOI technique uses silicon and silicon dioxide thermal bonding and backpolishing. The SOI is fabricated by potassium hydroxide anisotropic etching. Its insertion loss and cross talk are measured to be less than 4.81 dB and −18.6 dB, respectively, at a wavelength of 1.3 μm and a switching voltage of 0.91 V. Response time is ~210 ns.
© 1996 Optical Society of America
Original Manuscript: March 14, 1996
Published: October 15, 1996
C. Z. Zhao, E. K. Liu, G. Z. Li, Y. Gao, and C. S. Guo, "Zero-gap directional coupler switch integrated into a silicon-on insulator for 1.3-μm operation," Opt. Lett. 21, 1664-1666 (1996)