Infrared waveguiding in Si1-x-yGexCy upon silicon
Optics Letters, Vol. 21, Issue 5, pp. 345-347 (1996)
http://dx.doi.org/10.1364/OL.21.000345
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Abstract
Polarization-independent waveguiding at 1.32 and 1.54 µm was observed in single-crystal S1-x-yGexCy grown nearly lattice matched upon Si(100) by chemical vapor deposition. Losses were <5 dB/cm at 1.54 µm. Experiments indicate that the band gap of three SiGeC alloy waveguides was in the 0.93-0.99-eV range, in agreement with theory.
© 1996 Optical Society of America
Citation
Richard A. Soref, Ziv Atzman, Farhad Shaapur, McDonald Robinson, and Richard Westhoff, "Infrared waveguiding in Si1-x-yGexCy upon silicon," Opt. Lett. 21, 345-347 (1996)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-21-5-345
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